发明名称 MANUFACTURE OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor wafer with which process time and a raw material cost are reduced. SOLUTION: After a sliced semiconductor wafer 20 is treated in a diffusion process, the semiconductor wafer 20 is finished with a given thickness in a semiconductor wafer manufacturing step. The diffusion process is carried out for the front and rear faces of the wafer 20. The semiconductor wafer 20 is sliced at a position between the front and the rear faces into two pieces so as to obtain two semiconductor wafers with one of diffusion treated face and the other of non-diffused face. After that, the wafers are finished with a given thickness.
申请公布号 JPH11162909(A) 申请公布日期 1999.06.18
申请号 JP19980181241 申请日期 1998.06.26
申请人 KYUSHU ELECTRON METAL CO LTD;SUMITOMO SITIX CORP 发明人 KIZAKI KAZUNORI;NINOMIYA MASAHARU;YOSHIHARU TETSUJIROU
分类号 B28D5/02;H01L21/304;(IPC1-7):H01L21/304 主分类号 B28D5/02
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