发明名称 |
MANUFACTURE OF SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor wafer with which process time and a raw material cost are reduced. SOLUTION: After a sliced semiconductor wafer 20 is treated in a diffusion process, the semiconductor wafer 20 is finished with a given thickness in a semiconductor wafer manufacturing step. The diffusion process is carried out for the front and rear faces of the wafer 20. The semiconductor wafer 20 is sliced at a position between the front and the rear faces into two pieces so as to obtain two semiconductor wafers with one of diffusion treated face and the other of non-diffused face. After that, the wafers are finished with a given thickness. |
申请公布号 |
JPH11162909(A) |
申请公布日期 |
1999.06.18 |
申请号 |
JP19980181241 |
申请日期 |
1998.06.26 |
申请人 |
KYUSHU ELECTRON METAL CO LTD;SUMITOMO SITIX CORP |
发明人 |
KIZAKI KAZUNORI;NINOMIYA MASAHARU;YOSHIHARU TETSUJIROU |
分类号 |
B28D5/02;H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
B28D5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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