MOTT TRANSITION MOLECURE FIELD EFFECT TRANSISTOR OF NANO SCALE

摘要

PROBLEM TO BE SOLVED: To enable manufacture through multilayer, low power and small size, by making a conduction channel contain two-dimensional arrangement of at least a layer of molecules, isolating the conduction channel from a gate electrode via an insulating spacer layer, and enabling molecules to bear Mott transition between metal and insulator. SOLUTION: It is necessary that a conduction channel 10 contain two-dimensional arrangement of molecules be a strongly correlated electron system. The channel comes into contact with leads of a source 14 and a drain 16 which exist on the right side and the left side of the channel. A metal electrode isolated from a molecular layer or the channel 10 by an insulating spacer 18 forms a gate electrode 20. In material suitable for the spacer 18, oxide-like SrTiO3 is contained.