发明名称 POSITIVE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To obtain the positive resist composition suitable for use of <=220 nm exposure rays, especially, ArF excimer laser beams (193 nm) by incorporating an acid generating compound and a polycycloolefin resin having alicyclic groups on the main chain and carboxylic groups and a compound having plural specified groups. SOLUTION: The positive resist composition contains the acid generating compound by irradiation with activated rays or radiation and the polycycloolefin resin having alicyclic groups on the main chain and carboxylic groups, and the compound having at least 2 groups represented by the formula in which each of R1 -R3 is, independently, an H atom or an optionally substituted alkyl or cycloalkyl group, and each of 2 may combine with each other to form a ring comprising 3-8 C or hetero atoms; and Z is an -O-, -S-, -SO2 -, or-NH- group.
申请公布号 JPH11160877(A) 申请公布日期 1999.06.18
申请号 JP19980268267 申请日期 1998.09.22
申请人 FUJI PHOTO FILM CO LTD 发明人 AOSO TOSHIAKI;SATO KENICHIRO
分类号 G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 主分类号 G03F7/004
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