SURFACE MODIFICATION OF SEMICONDUCTORS USING ELECTROMAGNETIC RADIATION

摘要

Deposition rates of undoped silicate glass dielectric layers on thermal oxide are increased by pre-treating the thermal oxide layer with electromagnetic radiation (126) in the ultraviolet (UV) and/or vacuum ultraviolet (VUV) wavelengths. The surface smoothness of the resulting films are also increased by pre-treating films with UV and/or VUV radiation. Furthermore, the gap filling abilities of the undoped silicate glass films are increased by pre-treating the thermal oxide with UV and/or VUV radiation. New equipment (100) and methods are presented for exposing semiconductor devices (112) to UV and/or VUV radiation, and for enhancing the deposition rates and film quality for semiconductor manufacture. Semiconductor devices incorporating the new methods are also described.