Semiconductor substrate processing involves cleaning and forming an artificial oxide layer

摘要

An artificial oxide layer is formed on a semiconductor substrate after RCA cleaning and native oxide film removal. A semiconductor substrate is processed by RCA cleaning, removal of the resulting native oxide film and exposure to an atmosphere containing 20-100% oxygen to form an oxide layer of saturation thickness. Independent claims are also included for the following: (i) a semiconductor substrate processing method comprising RCA cleaning, removal of the resulting native oxide film and dipping in pure water at 20-100 deg C to form an oxide layer of 10-15/*10<-10> m thickness; and (ii) a semiconductor substrate processing method comprising SPM cleaning, using a mixture of sulfuric acid, hydrogen peroxide solution and pure water, and APM-ozone water cleaning, using a mixture of ammonia, hydrogen peroxide solution, pure water and ozone water, to form an oxide layer.