Substrate for integrated circuit with first semiconductor substrate layer

摘要

Substrate for integrated circuit has first semiconductor substrate layer formed of substrate monocrystal. On the first semiconductor substrate layer (10) is formed a second semiconductor layer (12) of a monocrystal with the same orientation as the first layer, and having a second doping concentration and the same conductivity as the first layer. On the first layer is directly formed a first semiconductor surface layer (11) from a monocrystal with the same orientation as the first layer. It has uniform third doping concentration and the same conductivity as the first layer for forming a first circuit section with numerous semiconductor elements. On the second layer is formed a second semiconductor surface layer (13), also of orientated monocrystal with fourth doping concentration and the second layer conductivity, to form a second circuit section with different function.