| 摘要 |
<p>The image of an isolated pattern (33) on a reticle (13) is transferred onto a photoresist layer on a wafer through a projection optical system. If the imaging characteristics of the projection optical system are satisfactory, the contrast of the distribution of an exposure E on the wafer is satisfactory as shown by a curve (35a) and the line width d1 of a resist pattern (52a) after development is larger. If the imaging characteristics fluctuate and the contrast of the exposure E is deteriorated as shown by a curve (35c), the line width d2 of a resist pattern (52c) after development is smaller. In order to avoid this phenomenon, if the contrast is deteriorated, the exposure E is reduced as shown by the curve (50c) so as to have the exposure E cross the photosensing level Eth of the photoresist layer at the positions same as the positions in the case of the curve (35a) and the line width of the resist pattern can be increased.</p> |
