发明名称 |
METHOD AND APPARATUS FOR GROWING HIGH PURITY SINGLE CRYSTAL SILICON CARBIDE |
摘要 |
Method and apparatus for growing semiconductor grade silicon carbide epitaxial layers or boules. Pure silicon feedstock is melted and vaporized. The vaporized silicon is reacted with a high purity carbon-containing gas, such as propane, and the gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal, or substrate, resulting in the growth of monocrystalline silicon carbide. |
申请公布号 |
WO9929934(A1) |
申请公布日期 |
1999.06.17 |
申请号 |
WO1998US25801 |
申请日期 |
1998.12.08 |
申请人 |
NORTHROP GRUMMAN CORPORATION |
发明人 |
BALAKRISHNA, VIJAY;THOMAS, R., NOEL;AUGUSTINE, GODFREY;HOPKINS, RICHARD, H.;HOBGOOD, H., MCDONALD |
分类号 |
C30B29/36;C30B23/00;C30B23/02 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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