发明名称 |
METHOD OF FORMING ETCHED STRUCTURES COMPRISING IMPLANTATION STEPS |
摘要 |
Methods are disclosed for forming shaped structures of silicon-containing material with ion implantation and an etching process which is selective to silicon-containing material implanted to a certain concentration of ions or with an etching process which is selective to relatively unimplanted silicon-containing material. In general, the methods initially involve providing a layer of silicon-containing material such as polysilicon or epitaxial silicon on a semiconductor substrate. The layer of silicon-containing material is then masked, and ions are implanted into exposed portions of the layer of silicon-containing material. The mask is removed, and the aforementioned selective etching process is conducted to result in one of an implanted and a relatively unimplanted portion of the layer of silicon-containing material being etched away and the other left standing to form a shaped structure of silicon-containing material. One preferred selective etching process uses an etchant solution comprising a selected weight percentage of tetramethyl ammonium hydroxide in deionized water. The etchant solution etches relatively unimplanted silicon-containing material implanted up to 60 times faster than it etches silicon-containing material implanted to beyond a threshold concentration of ions. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions. |
申请公布号 |
WO9840909(A3) |
申请公布日期 |
1999.06.17 |
申请号 |
WO1998US05001 |
申请日期 |
1998.03.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WU, ZHIQUIANG;LI, LI;FIGURA, THOMAS, A.;PAREKH, KUNAL, R.;PAN, PAI-HUNG |
分类号 |
B81B3/00;B81C1/00;H01L21/02;H01L21/265;H01L21/28;H01L21/285;H01L21/306;H01L21/3205;H01L21/3213;H01L21/336;H01L21/76;H01L21/762;H01L21/768;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8242;H01L23/52;H01L27/04;H01L27/088;H01L27/092;H01L27/10;H01L27/108;H01L29/78 |
主分类号 |
B81B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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