发明名称 |
NEW ETCH PROCESS FOR FORMING HIGH ASPECT RATIO TRENCHES IN SILICON |
摘要 |
A multistep etch process for forming high aspect ratio trenches in silicon having a silicon oxide and/or silicon nitride hardmask. In a first step, an etch composition of HBr and oxygen is used, depositing a passivation layer on the sidewalls and producing slightly tapered openings. In the second step, an etch composition of a fluorine-containing gas such as SF6, HBr and oxygen is used, producing more vertical openings at a high etch rate. The taper of the openings during the second step can be controlled by adjusting the relative amount of HBr or SF6 employed. This process is a clean process that does not require cleaning of the etch chamber between etch steps.
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申请公布号 |
WO9930359(A1) |
申请公布日期 |
1999.06.17 |
申请号 |
WO1998US21998 |
申请日期 |
1998.10.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, YIQIONG;LI, MAOCHENG;PAN, SHAOHER |
分类号 |
H01L21/302;H01L21/3065;H01L21/8242;H01L27/108;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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