发明名称 SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS EMPLOYING IT
摘要 A redundant circuit outputting a redundant use signal using a redundant memory cell in place of a defective normal memory cell based on 2n (n is an integer of 2 or more) internal address signals Ai, Aib, Ai+1, Ai+1b for selecting an arbitrary one of a plurality of normal memory cells, and the information from a plurality of program circuits. The program circuits each comprise 2<n-1> redundant address program circuits RAP(i), RAP(i+1), and one redundant use program circuit RP. The redundant circuit comprises redundant address decoding circuits (100, 110) outputting a plurality of redundant address signals Rdi, Rdi+1. A redundant decoding circuit (120) outputs a redundant use signal R_E/D based on the redundant address signals Rdi, Rdi+1 and the information from the redundant use program circuit RP.
申请公布号 WO9930327(A1) 申请公布日期 1999.06.17
申请号 WO1998JP05585 申请日期 1998.12.10
申请人 SEIKO EPSON CORPORATION;TOMOHIRO, YASUHIKO 发明人 TOMOHIRO, YASUHIKO
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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