| 摘要 |
<p>The aim of the invention is to provide a simplified method for the production of semiconductor and insulation films. The invention calls for a compound which is gaseous under normal conditions and which contains silicon, gallium, germanium or arsenic to be deposited on the surface (5S) of a substrate (5) held at a temperature below 0 DEG C. The film (11) thus formed is subsequently irradiated with UV radiation of a defined wavelength.</p> |
