发明名称 |
Low temperature diffusion process for dopant concentration enhancement |
摘要 |
Doped semiconductor with high dopant concentrations in small semiconductor regions without excess spreading of the doped region are formed by: (a) applying a dopant-containing oxide glass layer (60) on the semiconductor surface (61), (b) capping the dopant-containing oxide glass layer with a conformal silicon oxide layer (62), (c) heating the substrate from step (b) in a non-oxidizing atmosphere whereby at least a portion of the dopant in the glass diffuses into the substrate at the semiconductor surface, and (d) heating the glass-coated substrate from step (c) in an oxidizing atmosphere whereby at least a portion of the dopant in the glass near the semiconductor surface is forced into the substrate at the semiconductor surface by diffusion of oxygen through the glass. The method is especially useful for making buried plates in semiconductor substrates which may be used in trench capacitor structures. The preferred semiconductor substrate material is monocrystalline silicon. The preferred dopant is arsenic. <IMAGE>
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申请公布号 |
EP0923113(A2) |
申请公布日期 |
1999.06.16 |
申请号 |
EP19980309445 |
申请日期 |
1998.11.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ECONOMIKOS, LAERTIS;MURTHY, CHERUVU S.;SHEN, HUA |
分类号 |
H01L21/225;H01L21/334;H01L21/822;H01L23/00;H01L27/04;H01L29/94;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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