发明名称 |
METHOD AND DEVICE FOR MEASURING THE CONCENTRATION OF IONS IMPLANTED IN SEMICONDUCTOR MATERIALS |
摘要 |
<p>A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: (1) passing an excitation pulse through a diffracting mask (e.g., a phase or amplitude mask) to generate at least two excitation laser sub-pulses; (2) irradiating a region of the material with a grating pattern, formed by overlapping two excitation laser sub-pulses in time and space to initiate a time-dependent response (e.g., a change in refractive index) in the region; (3) diffracting a probe laser pulse having a duration that is at least long as the time-dependent response off the region to generate a time-dependent signal beam; (4) detecting the time-dependent signal beam to generate a signal waveform; and (5) processing the signal waveform to determine the concentration of ions implanted in the material.</p> |
申请公布号 |
EP0922198(A1) |
申请公布日期 |
1999.06.16 |
申请号 |
EP19980930416 |
申请日期 |
1998.06.19 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BANET, MATTHEW, J.;ROGERS, JOHN, A.;FUCHS, MARTIN |
分类号 |
G01N29/00;G01B9/02;G01N21/00;G01N21/17;G01N21/45;H01L21/66;(IPC1-7):G01B9/02 |
主分类号 |
G01N29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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