发明名称 Semiconductor device with ferroelectric capacitor dielectric and method for making
摘要 A semiconductor device (80) includes a transistor (82) and a capacitor structure (99, 120). The capacitive structure (99, 120) includes a dielectric material (97) between two conductive plates (98, 116). The transistor (82) has current carrying electrodes (87, 88), one of which is connected to the capacitive structure (99, 120) with a plug (92).
申请公布号 AU6768698(A) 申请公布日期 1999.06.16
申请号 AU19980067686 申请日期 1998.03.20
申请人 MOTOROLA, INC. 发明人 BETH ANN BAUMERT;LI-HSIN CHANG;TSE-LUN TSAI;KENNETH M. SEDDON
分类号 H01L21/02;H01L27/108;H01L27/115 主分类号 H01L21/02
代理机构 代理人
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