| 摘要 |
One embodiment of the instant invention is a method of abruptly terminating etching of a dielectric layer on a semiconductor wafer, the method comprising the steps of: removing the semiconductor wafer from the etchant, the etchant is held a first temperature; and rinsing the semiconductor wafer in a rinse solution that is at a second temperature, the second temperature is at least 5 DEG C colder than the first temperature. Preferably, the dielectric layer is comprised of: TEOS, BPSG, PSG, thermally grown oxide, and any combination thereof. Preferably, first temperature is approximately 25 DEG C and the second temperature is approximately 0 to 5 DEG C; or the first temperature is approximately 70 to 90 DEG C and the second temperature is approximately 10 to 30 DEG C. Preferably, the etchant is comprised of a buffered or unbuffered HF acid, and the rinse solution is comprised of deionized water. The second temperature is, preferably, at least 15 DEG C colder than the first temperature. <IMAGE> |
