| 摘要 |
<p>A photosensitive electronic component based on amorphous silicon and its alloys consists of two anti-serially interconnected p-i-n or n-i-p structures or Schottky contact structures. The active layers are normal to the light propagation direction. The charge carriers generated by blue light are sensed in the area of the first structure in the light incidence direction and generate a first voltage (V1) and the charge carriers generated by green or red light are sensed in the area of the second structure in the light incidence direction and generate a second (V2) and third (V3) voltage. At least one of the two intrinsically conductive layers consists of two partial layers. In order to achieve an improved spectral selectivity, the product of charge carrier mobility and lifetime ( mu -tau product) is higher in the first partial layer (I) and lower in the second partial layer (II) in the light incidence direction, so that both partial layers (I, II) have different charge carrier sensing lengths in the presence of an electric field. The first partial layer (I) in the light incidence direction thus absorbs more green light and the second partial layer (II) in the light incidence direction absorbs more red light.</p> |
