| 摘要 |
A heater is configured to reduce oxygen in the melt near the growing crystal is provided by defining a high temperature region in an upper region of the heater, above a melt surface of semiconductor material from which a crystal is grown. This effectively shifts the heat balance of the system upwards, and alters thermal convections of oxygen within the melt. Accordingly, the primary vehicle for transporting oxygen to the growing crystal is suppressed.
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