SAM REDUNDANCY CIRCUIT OF A DUAL PORT MEMORY,申请号KR19960024282-传众专利搜索

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发明名称	SAM REDUNDANCY CIRCUIT OF A DUAL PORT MEMORY
摘要
申请公布号	KR100197995(B1)	申请公布日期	1999.06.15
申请号	KR19960024282	申请日期	1996.06.27
申请人	HYUNDAI ELECTRONICS IND. CO.,LTD	发明人	CHOI, YOON-TAK
分类号	G11C29/00;(IPC1-7):G11C29/00	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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