发明名称 Method of producing semiconductor device and rinse for cleaning semiconductor device
摘要 A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.
申请公布号 US5911836(A) 申请公布日期 1999.06.15
申请号 US19970781774 申请日期 1997.01.09
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC. 发明人 HADA, MAYUMI;HASEMI, RYUJI;IKEDA, HIDETOSHI;AOYAMA, TETSUO
分类号 G03F7/42;H01L21/02;H01L21/306;H01L21/3213;(IPC1-7):B08B3/08;H01L21/44 主分类号 G03F7/42
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