发明名称 |
Method of producing semiconductor device and rinse for cleaning semiconductor device |
摘要 |
A method of producing a semiconductor device, which includes applying a conductive metal film on a semiconductor wafer, applying a photoresist on the conductive metal film, removing the photoresist with a removing agent containing a fluorine compound or at least one basic component selected from the group consisting of a quaternary ammonium hydroxide, an alkanolamine and a mixture of an alkanolamine and a reducing agent, and cleaning the resultant semiconductor device by rinsing with a rinse comprising water and at least one peroxide compound. The method of the present invention can provide a highly accurate wiring circuit without corrosion of the conductive metal film.
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申请公布号 |
US5911836(A) |
申请公布日期 |
1999.06.15 |
申请号 |
US19970781774 |
申请日期 |
1997.01.09 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
HADA, MAYUMI;HASEMI, RYUJI;IKEDA, HIDETOSHI;AOYAMA, TETSUO |
分类号 |
G03F7/42;H01L21/02;H01L21/306;H01L21/3213;(IPC1-7):B08B3/08;H01L21/44 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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