Method for producing a CMOS circuit

摘要

In producing a CMOS circuit, an n-channel MOS transistor and a p-channel MOS transistor are formed in a semiconductor substrate. In situ p-doped, monocrystalline silicon structures are formed by epitaxial growth selectively with respect to insulating material and with respect to n-doped silicon, such silicon structures being suitable as a diffusion source for forming source/drain regions of the p-channel MOS transistor. The source/drain regions of the n-channel MOS transistor are produced beforehand by means of implantation or diffusion. Owing to the selectivity of the epitaxy that is used, it is not necessary to cover the n-doped source/drain regions of the n-channel MOS transistor during the production of the p-channel MOS transistor.