发明名称 |
Method for pulling a single-crystal semiconductor |
摘要 |
A method for pulling a <110> single-crystal silicon aims at preventing the crystal from being cut in diameter-reducing and suppress the increase in cost due to the cut prevention to the minimum. In the step for forming a diameter-reduced portion performed prior to the step for growing a <110> single-crystal silicon by the Czochralski method, a magnetic field having a strength of 500 gauss or more is applied and while suppressing a melt surface vibration and temperature variation, the crystal diameter is reduced to 2.00 mm or smaller.
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申请公布号 |
US5911823(A) |
申请公布日期 |
1999.06.15 |
申请号 |
US19960762584 |
申请日期 |
1996.12.10 |
申请人 |
KOMATSU ELECTRONICS METALS CO., LTD. |
发明人 |
SONODA, KOUJI;MIMURA, TOSHIO |
分类号 |
C30B15/36;C30B15/22;C30B15/30;C30B29/06;C30B33/04;(IPC1-7):C30B15/20 |
主分类号 |
C30B15/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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