METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND DEVICE THEREOF

摘要

A method for manufacturing an SOI semiconductor substrate and a manufacturing apparatus therefor in which a mean implantation depth and a dose of each of a series of oxygen ion implantations are continuously or stepwise changed, a depthwise distribution of an oxygen atom concentration has a single peak and uniform in a plane at a predetermined depth, a maximum oxygen atom concentration is preferably no larger than 2.25x10<22> atoms/cm<3> and no smaller than 1.0x10<22> atoms/cm<3>, a total oxygen dose is equal to a desired thickness of a buried oxide film multiplied by 4.48x10<22>, and preferably a thermal process at a temperature of 1300 DEG C or higher is applied after the completion of the oxygen ion implantation to form the buried oxide film.