FLASH MEMORY AND FABRICATION METHOD THEREOF,申请号KR19960011064-传众专利搜索

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发明名称	FLASH MEMORY AND FABRICATION METHOD THEREOF
摘要
申请公布号	KR100192546(B1)	申请公布日期	1999.06.15
申请号	KR19960011064	申请日期	1996.04.12
申请人	HYUNDAI MICRO ELECTRONICS CO.,LTD.	发明人	LIM, MIN-GYU;PARK, EUN-JUNG
分类号	H01L21/8247;H01L21/28;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L27/115	主分类号	H01L21/8247
代理机构		代理人
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地址

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