PARALLEL BIT TEST CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE,申请号KR19960033232-传众专利搜索

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发明名称	PARALLEL BIT TEST CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	KR100192590(B1)	申请公布日期	1999.06.15
申请号	KR19960033232	申请日期	1996.08.09
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	SHIN, CHUNG-SONN;SOK, YONG-SIK
分类号	G01R31/28;G11C29/26;G11C29/34;G11C29/38;H01L21/66;(IPC1-7):H01L21/66	主分类号	G01R31/28
代理机构		代理人
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