| 摘要 |
PROBLEM TO BE SOLVED: To obtain an aluminum nitride bonded structure capable of mutually bonding substrates composed of aluminum nitride tightly, firmly and with a high accuracy, having no reduction in heat transfer characteristics at the bonded interface of substrates and a bonding layer part. SOLUTION: This aluminum nitride bonded structure is obtained by integrally bonding substrates composed of an aluminum nitride sintered compact with a bonding layer 3 composed of an aluminum nitride sintered compact. The electric crystal particle diameter of the aluminum nitride constituting the bonding layer 3 is smaller than that of the aluminum nitride constituting the substrates and is <=5 μm. The thickness of the bonding layer 3 is made <=50 μm to constitute the aluminum nitride bonded structure. |
