| 摘要 |
A semiconductor chip 1 is fixedly adhered to an island 2 of a lead frame with a die bonding material 4. The electrode pad positioned at an upper surface of the semiconductor chip 1 and a lead 3 of the lead frame are interconnected with a bonding wire 5. To the semiconductor chip 1, a heat spreader 6 is adhered with an insulating adhesive agent 7. The semiconductor chip 1, the island 2, an inner lead portion 3a of lead 3, the bonding wire 5 and the heat spreader 6 are sealed with sealing resin 8. Since, after completion of the die bonding and wire bonding processes, the heat spreader 6 is adhered to the chip 1, a high temperature die bonding and a high temperature wire bonding become possible without taking the thermal characteristics of the adhesive agent into account. |
