| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a new and useful susceptor with extended life used for gas phase growth, capable of extremely reducing the uneven abnormality of the resistance of a Si wafer, avoiding the generation of a non-doping failure, and sufficiently inhibiting the generation of a pinhole in a SiC film. SOLUTION: In this susceptor for gas phase growth, a silicon carbide film is coated on the surface of a graphite substrate by CVD method. Therein, the interface between the graphite substrate and the SiC film and the surface of the SiO are subjected to purification treatments, respectively, (the amounts of all impurities on the surfaces are preferably <=1×10<11> atoms/cm<2> ). The method for producing the suseptor comprises applying several coating treatments to the surface of the graphite substrate to form a SiC film having a prescribed thickness. Therein, purification treatments are applied to the surface to be coated before and after the coating treatments, respectively, (the surfaces are preferably washed with a high temperature gas containing a halogen in a dry state in the same CVD oven).</p> |
