| 摘要 |
A sidewall construction is utilized in the fabrication of semiconductor devices comprising planar type bipolar transistors wherein the width of the sidewall construction can be accuracy controlled which, in turn, controls accuracy the channel length of the base of the planar type bipolar transistors. This technique provides ways of preventing short circuiting between the formed transistor collector and emitter regions of the planar type bipolar transistors. The sidewall construction can also be employed in fabrication combination planar type bipolar/MIS type transistors resulting in higher density of these structures over the prior art laterally positioned structures. |
