| 发明名称 |
THRESHOLD SWITCHING DEVICE AND METHODS OF MAKING THE SAME |
| 摘要 |
<p>This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes. <IMAGE></p> |
| 申请公布号 |
KR100200399(B1) |
申请公布日期 |
1999.06.15 |
| 申请号 |
KR19920007430 |
申请日期 |
1992.05.01 |
| 申请人 |
DOW CORNING CORPORATION |
发明人 |
MICHAEL, KEITH WINTON;PERNISZ, UDO C. |
| 分类号 |
H01L29/86;G06N3/063;H01L45/00;H01L49/02;(IPC1-7):H01H1/02 |
主分类号 |
H01L29/86 |
| 代理机构 |
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