MAGNETORESISTANCE EFFECT FILM, A METHOD OF MANUFACTURING THE SAME, AND MAGNETORESISTANCE EFFECT DEVICE

摘要

Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc2<Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.