MASK, FABRICATION METHOD THEREFOR, ELECTRON BEAM EXPOSURE METHOD, AND APPARATUS THEREOF

摘要

A device exposing an object to an electron beam employs a mask formed of a plate of material which blocks the electron beam and which has plural pattern exposure blocks defined therein, each having one or more aperture defining regions therein and, when selected, determining the shaping of the electron beam passing therethrough so as to expose a respective pattern on an object. Each aperture-defining region has a respective single aperture or respective plural, spaced apertures formed therein and having a total area size selected to be smaller than the area size of the aperture defining region, in accordance with controlling the current level of an electron beam passing therethrough, while reducing Coulomb interaction of the electron beam passing through the aperture or apertures of each aperture defining portion of the pattern exposure block.