Metal-semiconductor contact formed using nitrogen plasma

摘要

A low-resistance metal-semiconductor contact for use in integrated circuits includes a titanium silicide layer overlaying a semiconductor body. The top surface of the titanium silicide layer is a combination of silicides and titanium nitride formed by exposing the top surface to a nitrogen plasma. This combination surface is covered by a layer of titanium nitride, which is in turn covered by a layer of conductive metal, such as tungsten.