发明名称 METHOD OF MAKING A HYBRID SEMICONDUCTOR STRUCTURE AND THE SEMICONDUCTOR STRUCTURE THEREOF
摘要 <p>To adhere a semiconductor chip or wafer substrate (10) to a carrier plate substrate (11) of, for example, ceramic, glass or the like, in which the two substrates carry exposed connection pads (13, 16), at least one of the substrates is coated with an adhesive electrically insulating, normally tacky material, which is exposed, by photo-masking technology, in all areas except those where the pads are located, to cure the material. Metallic powder, typically silver, is then introduced into the remaining tacky portions of the layer, to render it conductive, and the two substrates are then pressed against each other, with the pads in alignment, the metal powder within the tacky insulating material forming an electrical connection between said pads. The insulating layer can be applied either to the semiconductor chip or wafer substrate or to the carrier plate substrate, or to both. Electrical connecting lines to the pads, on the surface of one of the substrates, are covered by the then cured electrical insulating layer. Preferably, the surface, and the connecting lines thereon, if used, are passivated before application of the adhesive layer which, then, is cured, except in the location of the pads.</p>
申请公布号 KR100196242(B1) 申请公布日期 1999.06.15
申请号 KR19900004476 申请日期 1990.04.02
申请人 ROBERT BOSCH GMBH 发明人 DIETER, SEIPLER
分类号 H01L21/56;H01L21/60;H01L23/532;(IPC1-7):H01L23/48 主分类号 H01L21/56
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