发明名称 |
Heterojunction semiconductor device |
摘要 |
A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.
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申请公布号 |
US5912480(A) |
申请公布日期 |
1999.06.15 |
申请号 |
US19960665510 |
申请日期 |
1996.06.18 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
ZHU, YU;ISHIMARU, YOSHITERU;TAKAHASHI, NAOKI;SHIMIZU, MASAFUMI |
分类号 |
H01L29/872;H01L21/338;H01L29/205;H01L29/47;H01L29/778;H01L29/812;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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