发明名称 HIGH VOLTAGE CUT-OFF FOR PROTECTING SEMICONDUCTOR DEVICE
摘要 The present invention discloses a high voltage cut-off semiconductor device that can prevent unstable supply voltage of several volts that is not cut off by a conventional electrostatic discharge protection circuit from being applied to an internal circuit and apply only stable supply voltage to the internal circuit, thereby enhancing the characteristics of the semiconductor device and shortening the channel length of the transistors forming the internal circuit by suing a constant voltage circuit having a zener diode.
申请公布号 KR100196524(B1) 申请公布日期 1999.06.15
申请号 KR19940029186 申请日期 1994.11.08
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 LEE, WOO-BONG;HONG, TAEK-KI;YEO, TAE-KYUNG;KO, JAE-WAN;KIM, SE-JUNG;O, SE-JUN
分类号 H01L27/04;H01L21/822;H01L23/60;H01L27/02;(IPC1-7):H01L27/04 主分类号 H01L27/04
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