Mo-W material for formation of wiring, Mo-W target and method for production thereof, and Mo-W wiring thin film

摘要

PCT No. PCT/JP94/02095 Sec. 371 Date Sep. 6, 1996 Sec. 102(e) Date Sep. 6, 1996 PCT Filed Dec. 14, 1994 PCT Pub. No. WO95/16797 PCT Pub. Date Jun. 22, 1995A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability.