POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF,申请号KR19950055604-传众专利搜索

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发明名称	POWER MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF
摘要
申请公布号	KR100192953(B1)	申请公布日期	1999.06.15
申请号	KR19950055604	申请日期	1995.12.23
申请人	SAMSUNG ELECTRONICS CO, LTD.	发明人	KIM, SUNG-HAN;PARK, YONG-PYO
分类号	H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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