发明名称 Semiconductor device manufacturing method by carrying out logic design
摘要 In order to modify a combination of logic gates based on relationships between physical locations of the logic gates in a semiconductor integrated circuit which has already been subjected to layout design in the middle of design of the semiconductor integrated circuit, circuit portions whose combination is to be modified are specified, then the circuit portions are transformed into logically equivalent intermediate representations (NAND2s, IVs, etc.), then anew combination of the logic gates is generated based on the intermediate representation, and then the prior combination of the logic gates is replaced with the new combination of the logic gates.
申请公布号 US5913101(A) 申请公布日期 1999.06.15
申请号 US19970834272 申请日期 1997.04.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MUROFUSHI, MASAKO;ISHIOKA, TAKASHI
分类号 H01L21/82;G06F17/50;(IPC1-7):H01L21/00 主分类号 H01L21/82
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