Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats of blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production so such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.
