| 摘要 |
<p>A semiconductor device having a field effect transistor constituted in a semiconductor layer formed on an insulating layer. The semiconductor device is provided with a body electrode electrically connected to the region where the channel of the field effect transistor is formed and a back gate electrode provided below the insulating layer oppositely to the channel forming region. To the body electrode and back gate electrode, potentials which control carriers of the opposite conductivity to that of the channel formed in the upper portion of the channel forming region are given. Thus, the drain breakdown voltage of the field effect transistor is high and the threshold voltage of the transistor is stabilized. In addition, the threshold voltage of the field effect transistor can be changed in a stable state.</p> |
