发明名称 BROAD-BAND QUANTUM WELL INFRARED PHOTODETECTORS
摘要 A quantum well (200) can be designed to detect light of a particular wavelength by tailoring the potential depth and width of the well (202). The design produces two energy states (210, 208) in the well (202) separated by the desired photon energy. The GaAs/AlxGa1-xAs material system allows the quantum well shape to be varied over a range wide enough to enable light detection at wavelengths longer than approximately 6 mm. Hence, large bandgap materials such as GaAs/AlxGa1-xAs material has made fabrication of a large focal plane arrays tuned to detect light at wavelengths from 6 to 25 mm possible.
申请公布号 WO9927583(A1) 申请公布日期 1999.06.03
申请号 WO1998US25047 申请日期 1998.11.23
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 BANDARA, SUMITH, V.;GUNAPALA, SARATH, D.
分类号 G01J1/44;G01J5/48;H01L27/14;H01L27/146;H01L31/0264;H01L31/0352;H01L31/103;(IPC1-7):H01L29/06;H01L31/032;H01L31/033;H01L31/00 主分类号 G01J1/44
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