CHEMICAL MECHANICAL POLISHING OF FeRAM CAPACITORS

摘要

A method of fabricating a ferroelectric capacitor structure by sequentially depositing a bottom electrode layer (30), a ferroelectric layer (32) and a top electrode layer (34) on a base structure, optionally with deposition of a layer of a conductive barrier material (28) beneath the bottom electrode layer, to form a capacitor precursor structure, and planarizing the capacitor precursor structure by chemical mechanical polishing to yield the ferroelectric capacitor structure, e.g., a stack capacitor or trench capacitor. The process is carried out without dry etching of the electrode layers or dry etching of the ferroelectric layer, to yield ferroelectric capacitors having a very small feature size, as for example between 0.10 and 0.20 mu m.