| 摘要 |
<p>PCT No. PCT/SE93/00819 Sec. 371 Date May 25, 1995 Sec. 102(e) Date May 25, 1995 PCT Filed Oct. 11, 1993 PCT Pub. No. WO94/09511 PCT Pub. Date Apr. 28, 1994Transistors for controlling high currents are composed of a large number of paralleled transistor elements which are integrated in a semiconductor chip. In order to minimise the forward resistance through the semiconductor chip, the sources and the drains of the transistor elements are arranged on the same side of the semiconductor chip. The sources and the drains of the transistor elements and the source and the drain of the transistor component proper are contacted with one another by means of conductors arranged on at least two different levels, the conductors on a level more distant from the semiconductor chip being fewer than those on a level closer to the semiconductor chip, resulting in a small distance between the element electrode and the component electrode and, consequently, a small contribution to the forward resistance from the contacting.</p> |
