| 摘要 |
PROBLEM TO BE SOLVED: To grow a large-sized single crystal of good quality with ultralow contents of micropipe defects, lattice defects and crystal grain boundaries in spite of reducing thermal energy required for crystal growth. SOLUTION: A composite M prepared by forming a mixed layer 2 comprising a mixture ofα-2H-SiC withβ-3C-SiC in a mixing ratio set at <=10% and transforming the phase of all or a part of theα-2H-SiC intoα-6H (or 4H)-SiC is heat-treated at 1,600-2,400 deg.C to thereby convert the whole of the mixed layer 2 intoα-SiC and orient the resultantα-SiC in the same direction as the crystal axis of theα-SiC single crystal substrate 1. As a result, a single crystal is integrally grown.
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