| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, which is excellent in operation characteristics and life characteristics, can be highly reliable and is constituted using a II-VI chemical semiconductor material. SOLUTION: In a semiconductor laser of an SCH structure, wherein a ZnCdSe layer is used as an active layer, a ZnSSe layer is used as an optical waveguide layer, and a ZnMgSSe layer is used as a clad layer, a p-type ZnSSe cap layer 10, which has a part having a stripe form and has grooves 10a in both sides of the part, is provided on a p-type ZnMgSSe clad layer 9. The point parts of the grooves 10a reach to the depth in the middle in the thickness direction of the layer 9. A p-type ZnSe contact layer 11, a p-type ZnSe/ZnTEMQW layer 12 and a p-type ZnTe contact layer 13 are provided on the part having the stripe form of the layer 10. Insulating layers 14 are respectively provided on the parts, which are located under the parts of the grooves 10a, of the layer 9 and the parts adjacent to the outside parts of the grooves 10a, of the layer 10 and a current constricting structure is formed. |
