| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor storage with a fine structure for preventing a capacity contact and a groove (trench) for element isolation from being over lapped, and its manufacturing method. SOLUTION: A device is provided with a structure 40. In the structure 40, an insulation layer 13 which is used as a field oxide film 2 is arranged between a pair facing opposite to the field oxide films 2 in a region 30, surrounded by a plurality of field oxide films 2 that are formed in parallel at equal intervals each other in a fixed direction on a substrate and a gate electrode 4, that is arranged on the field oxide film 2 and has a plurality of sidewall insulating films 7, formed in parallel at equal intervals with each other with a specific angle to the field oxide film 2. At the same time, a wiring layer 8 is provided between each piece part of the insulation layer part 13 that faces opposite the gate electrode 4 with one facing opposite pair of the sidewall insulating films 7 and 7 and the sidewall insulating film 7. |
