| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit system which relaxes a semiconductor device of the problem of a withstanding voltage while a device is made to operate with a relatively high voltage by using a MIS-FET having a gate oxide film for a high speed and low withstanding voltage device which normally operates with a relatively low voltage. SOLUTION: A basic circuit composed of at least four (1st-4th) transistors T100 -T103 whose source/drain routes are connected in series to each other between predetermined potentials is employed. The gates of the 1st and 4th transistors are used as input parts for a pair of small amplitude signals and the junction node between the 1st and 2nd transistors and the junction node between the 3rd and 4th transistors are used as output parts of the pair of small amplitude signals. Further, the junction node between the 2nd and 3rd transistors is used as the output part of a large amplitude signal. A 1st bias voltage which is formed by using the high level of a predetermined voltage as a reference and a 2nd bias voltage which is formed by using the low level of the predetermined voltage as a reference are applied to the gates of the 2nd and 3rd transistors respectively. A logic circuit, a level transformation circuit and an I/O circuit are developed by using the basic circuit as a fundamental circuit. |
