| 摘要 |
PROBLEM TO BE SOLVED: To allow memory function using a single field effect transistor by applying an electric field to a gate for a carrier in a channel to move into a trap region, and changing a drain current amount, based on presence of electric charge amount in trap. SOLUTION: An Si layer and an Si1- XGeX mixed-crystalline layer are lattice- conformed to an Si1- XGeX mixed-crystal for growth, so that Si layer such as biaxial tensile stress is applied is formed. A fine Si crystal region is embedded in the Si1- XGeX mixed-crystal of a barrier layer to indicate a specified band structure. Thus when a positive voltage is applied to a gate electrode, electrons in a channel are confined in a fine Si crystal region through tunnel effect. In this state, a region close to a channel is charged negative so that a drain current is reduced. By monitoring changes in the current amount, whether fine crystal regions are charged or not is discriminated. |
