NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which has good current- voltage characteristic and can be manufactured easily. SOLUTION: A nitride semiconductor element is provided with a gallium nitride semiconductor layer 13, having a p-type conductivity and a positive electrode 15 which is formed on the semiconductor layer 13 having ohmic contact with the layer 13. The positive electrode 15 is constituted of a first electrode layer 1, formed in contact with the semiconductor layer 13 and containing Mo as a main component and a second electrode layer 2 formed on the layer 1 and containing Pt as a main component.